DMN66D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(ON)
6 ? @ V GS = 5V
5 ? @ V GS = 10V
Package
SOT363
I D
T A = +25°C
90mA
115mA
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
?
?
?
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
?
Load Switch
?
?
Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
?
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
ESD PROTECTED TO 1kV
SOT363
D 2
S 2
G 1
G 2
S 1
D 1
Ordering Information (Note 4)
Top View
Top View
Internal Schematic
Part Number
DMN66D0LDW -7
Case
SOT363
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MN1
YM
MN1
YM
MN1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
1 of 5
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料
DMN66D0LT-7 MOSFET N-CH 60V 115MA SOT-523
DMP1022UFDE-7 MOSF P CH 12V U-DFN2020-6 TYPE E
DMP1096UCB4-7 MOSFET P-CH 12V 2.6A 4-UFCSP
DMP1245UFCL-7 MOSFET P-CH 12V 6.6A 6-UFDFN
DMP2004DMK-7 MOSFET DUAL P-CH 20V SOT-26
DMP2004DWK-7 MOSFET DUAL P-CH 20V SOT-363
DMP2004K-7 MOSFET P-CH 20V 600MA SOT23-3
DMP2004TK-7 MOSFET P-CH 20V 430MA SOT-523
相关代理商/技术参数
DMN66D0LT 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN66D0LT-7 功能描述:MOSFET NMOS-Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN66D0LW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN66D0LW-7 功能描述:MOSFET NMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN-8602 制造商:LSI 制造商全称:LSI 功能描述:LSI Logic DiMeNsion 8602 DVD Recorder system Processor
DMN-8603 制造商:LSI 制造商全称:LSI 功能描述:DiMeNsion -3 DVD Recorder Solution Servo, Video Decoder and System Processor
DMN-8652 制造商:LSI 制造商全称:LSI 功能描述:LSI Logic DiMeNsion 8652 HDD/DVD Recorder Processor
DMNF1-283FIB-3K 功能描述:端子 Metric Fem Disc nylon fully insul RoHS:否 制造商:AVX 产品:Junction Box - Wire to Wire 系列:9826 线规:26-18 接线柱/接头大小: 绝缘: 颜色:Red 型式:Female 触点电镀:Tin over Nickel 触点材料:Beryllium Copper, Phosphor Bronze 端接类型:Crimp